Correlation-driven electron-hole asymmetry in graphene field effect devices

Abstract Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and regime operation for devices. The observation electron-hole graphene recently twisted moiré heterostructures has spurred interest into whether it stems from single-particle effects or correlations, which are core to emergence intriguing phases systems. Here, we report an effective way access 2D materials by directly measuring quasiparticle self-energy graphene/Boron Nitride field-effect As chemical potential moves hole electron-doped side, see increased strength electronic correlations manifested increase band velocity inverse lifetime. These results suggest intrinsically drive leveraging this provide alternative avenues generate exotic heterostructures.